HTC One Max News: September Release Date Rumored for Phablet

The massive HTC One Max is the latest phablet hitting the market this year, and it looks as though the device will be available in September, according to a new leak. That means HTC fans will only have to wait a few weeks before the One Max is available.

The leak comes from the German website Mobile Geeks, translated by Gazelle, who claim to have a source in the Taiwan operating base for HTC. In addition to the information about the One Max's release date, several specs for the device were also leaked. The display for the device will be a 6-inch 1080p Super LCD display, meaning the device will be bigger than most smartphones, but not quite as big as the smaller tablets on the market. The device will also apparently be able to play videos in Full HD. To power the device, the HTC One Max will boast an impressive Qualcomm Snapdragon 2.3Ghz processor, meaning that in addition to the big display, the phablet will also be a competent machine that will not get bogged down. Helping out the processor is 2GB of RAM. Finally, it looks as though future owners of the HTC One Max will have two different internal memory options, with the device coming in 32GB or 64GB models, according to the leak.

This leak does not address one of the biggest rumors about the HTC One Max: the inclusion of a fingerprint scanner. One earlier leak showed the device with the security feature, while another leak did not. To find out for certain, it looks as though we'll have to wait until HTC clarifies the device's features, if and when they have an official reveal for the HTC One Max. The HTC One Max is rumored to also have Android 4.3 and Sense 5.5, meaning the device will be fairly top-of-the-line in that regard.

The HTC One Max represents the growing trend in the mobile industry to make hybrid phone/tablets, aka "phablets." While HTC represents the high-end smartphone market well, the HTC One Max is the company's first foray into the phablet market, and it remains to be seen how successful the device can be in the rapidly expanding field.